Synthesis of graphene by chemical vapor deposition and solid phase reaction process towards next generation energy device applications
Başlık çevirisi mevcut değil.
- Tez No: 401556
- Danışmanlar: PROF. TANEMURA MASAKI
- Tez Türü: Doktora
- Konular: Metalurji Mühendisliği, Metallurgical Engineering
- Anahtar Kelimeler: Belirtilmemiş.
- Yıl: 2014
- Dil: İngilizce
- Üniversite: Nagoya Instıtute Of Technology
- Enstitü: Yurtdışı Enstitü
- Ana Bilim Dalı: Belirtilmemiş.
- Bilim Dalı: Belirtilmemiş.
- Sayfa Sayısı: Belirtilmemiş.
Özet
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Özet (Çeviri)
In this research I demonstrate the synthesis of graphene on Ag foil by the atmospheric pressure (AP) chemical vapor deposition (CVD) process as a tarnish resistant coating. Continuous graphene film on Ag foil is grown using the solid camphor as a carbon precursor with a gas mixture of Ar and H2. The Raman spectroscopy and transmission electron microscopy studies revealed formation of few-layer graphene structure on Ag surface. Tarnishing of silver surface through sulfidation is investigated with and without coating the graphene film. It is observed that the bare Ag surface immediately react with sulfur vapor to turn black, whereas graphene coating passivates the Ag surface robustly and thereby restraining sulfur reaction to preserve from tarnishing. Our findings show that large-area graphne film can be effectively grown on Ag surface by a CVD process as a tarnish and corrosion resistance barrier. At the second step, formation of the silver nanoparticles (Ag-NPs) in chemical vapor deposited graphene by dissolving base Ag foil and their integration for Schottky junction fabrication was demonstrated an application work. Ag-NPs of the size 20-100 nm were directly obtained on graphene surface by dissolving the base Ag foil of as-synthesized graphene in a diluted nitric acid solution. A Schottky junction is fabricated by transferring the Ag-NPs incorporated graphene on Si substrate. Significant photoresponse is observed with illumination of 3.6, 5.1 and 2.1 mW/cm2 of near-infrared (1000 nm), visible (550 nm) and near ultraviolet (350 nm) light, respectively. The graphene-Si Schottky junction shows photoresponse of 122, 98 and 78 mAW−1 at 550, 350 and 1000 nm, respectively. The strong photoresponce can be attributed to light interaction with the plasmonic Ag-NPs and effective graphene-Si Schottky junction. Our finding shows that enhancing the light absorption with plasmonic nanoparticles weakest of incident light can be detected for a broad-wavelength range. Synthesis of transfer-free high quality graphene on arbitrary substrate by metal assisted graphitization with a control carbon diffusion process has lot of significant for device applications. In this work, I also demonstrate synthesis of a monolayer graphene using common triblock co-polymer (EOnPOmEOn) as carbon source by the solid phase reaction approach. In the synthesis process, a Ni and NiO thin film were used as catalytic and carbon diffusion barrier layer, respectively on top of polymer deposited SiO2/Si substrate. The long carbon chain of a triblock co-polymer pluronic F127 (EO106PO70EO106 ) can be graphitized in presence of the Ni layer, where carbon diffusion to top surface is controlled by NiO thin layer. The effect of carbon diffusion, thickness of polymer layer and annealing process are studied to obtain high quality monolayer graphene. Findings reveal that the NiO/Ni stacked thickness of polymer layer and reaction process in H2 atmosphere strongly influence the quality of synthesized graphene.
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