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Analog tümdevre analizine uygun yeni bir mosfet modeli

A New mosfet model suitable for analog ic analysis

  1. Tez No: 39109
  2. Yazar: ALİ ZEKİ
  3. Danışmanlar: PROF.DR. HAKAN KUTMAN
  4. Tez Türü: Yüksek Lisans
  5. Konular: Elektrik ve Elektronik Mühendisliği, Electrical and Electronics Engineering
  6. Anahtar Kelimeler: Mosfet modeli, Tümdevre analizi, Mosfet model, Integrated circuits analysis
  7. Yıl: 1993
  8. Dil: Türkçe
  9. Üniversite: İstanbul Teknik Üniversitesi
  10. Enstitü: Fen Bilimleri Enstitüsü
  11. Ana Bilim Dalı: Belirtilmemiş.
  12. Bilim Dalı: Belirtilmemiş.
  13. Sayfa Sayısı: Belirtilmemiş.

Özet

ÖZET Bu çalışmada, günümüzde önemi sürekli artan MOS tranzistor için analog tümdevre analizine uygun bir doğru akım modeli geliştirilmiştir. Bu yapılırken, analog tümdevre analizinde kullanılacak bir aktif eleman modelinin, o elemanın akım-gerilim değişimleri yanında iletkenlik-gerilim değişimlerinin gösterdiği non-lineer özellikleri de yeterli bir biçimde temsil edebilmesinin zorunlu olduğu gözönünde tutulmuştur. Burada, özellikle Id-Vds ve gds-VDs değişiminin düzgün bir biçimde modellenmesi amaçlanmış, bunun ipin de, bu değişimlerdeki non-lineerliğin en önemli etkeni olan kanal boyu modülasyonunun iyi bir biçimde modellenmesine öncelik verilmiştir. Oluşturulan model yardımıyla, NMOS ve PMOS transistorlar için elde edilen akım ve iletkenlik değişimleri, ölçüm yoluyla belirlenen değişimlerle karşılaştırılmış ve uyumlu oldukları gözlenmiştir. Ayrıca, yeni model yardımıyla CMOS kuvvetlendirici için distorsiyon analizi yapılmış ve sonuçların pratikteki sonuçlarla benzeştiği görülmüştür. Böylece, geliştirilen modelin analog devre analizine uygun olduğu kanıtlanmıştır. SPICE MOS modellerinin ise, özellikle iletkenlik değişimleri ve distorsiyon konusunda yetersiz olduğu gösterilmiş, yeni modelin bağıntılarının karmaşıklığının ve parametre sayısının az olmasının onu analog tümdevre analizinde SPICE MOS modellerinin bir alternatifi.-, durumuna getirdiği vurgulanmıştır. iv

Özet (Çeviri)

SUMMARY A New MOSFET Model Suitable For Analog IC Analysis The importance of analog MOS integrated circuits has been increasing rapidly for the last decade, owing to the great developments in VLSI (Very Large Scale Integration) technologies and the non-stop demand for analog functional MOS blocks for use in complete-systems where digital and analog circuits lie in the same chip. Due to the improvements in lithographic techniques, MOS device dimensions is running below micrometer-lengths, enabling more transistors to be placed into the same ship, but in turn, giving rise to many undesired effects in the device operation. As a result of these developments, demands for adequate modelling of MOS transistors has increased a lot. An adequate device model for use in analog circuit analysis should be able to represent the non-linear electrical behaviour of the device; especially the conductance-voltage characteristics as well as the current-voltage ones. This is very important particularly when the non-linearity measure of a circuit's transfer function is considered. A very common situation where non-linearities are to be considered with acceptably little err or s is the harmonic distortion analysis. A true distortion analysis can be held only when the model utilized is adequate for representing the non linear behaviour of the active devices used in. the circuit, since the harmonic distortion depends directly on the non-linear nature of the devices* electrical characteristics. Here, we can derive an important result such that; the efficiency of a device model for analog circuit analysis can be measured by the truth of distortion analysis results obtained using that model, as well as by comparing the I-V and g-V (g: conductance) relations obtained from the model and experiment. In this work, a static MOS model has been developed by utilising the ideas introduced above. Because of the importance in analog IC analysis -especially in distortion analysis-, special care has been shown to model the Id-Vds and gds-Vos characteristics of thedevice. Precedence has been given to representation of channel length modulation, the most important non- linearity effect in the“saturation region”, where almost every MOS transistor taking part in an analog circuit operates in. Modelling channel most difficult jobs in m order to represent this El-Mansy and Boothroyd three-dimensional analys which is a good device closed-form formulae. C solved by using numerica too complex for use circuits. length modu odelling th effect tru did[31], is of the d model but losed-f orm 1 analysis in computer lation is one of the e MOS transistor. In ely, one should, like utilize the two or evice, the result of -unfortunately- with equations can only be methods and thus are simulation of the Here, we adopted the model of El-Mansy and Boothroyd, with the closed-form equations converted to explicit equations by some simplifications. In their simplified forms, the equations have proven to be efficient enough for modelling the channel length modulation due to the changes in Vds when the device is operating in saturation. < 3 60-1 Vra= 6 V *-T* * A- AAAArt EXPERIMENT NEW MODEL (LEV“ - - SPICE (LEVEL-3) Vcs» 4 V & - c ? -a* ' ?fr » ??<^- a ? -* Ves~ 2 V ( » & B ^i mVim - B ”?Vf - B M ' ^y - it *“ * tf ' ”a *~ -A ' <i lit iV I I I I I I I I I I I I I I I I I I I I I I I I I i I I I I I I I I I I I I I I I I I I 1 I I I I I I I I I I I I I I I I I I r VDS(V) Figure 1. Id-Vds characteristics (NMOS) obtained from experiment, new model and SPICE M0S3 model. VI< 50 n A~£~ JT“Sı ”“A-ıf g~i”^^ ?a ~a~jg~ g t ?ttına“1 an t& j &-A”*t *b -a»*^ a? g ti- a* ^' '& ' & - a O yTı I I I 1 1 I I I I 1 I I 1 1 I I 1^1 I 1 I I I I I I 1 I I I I I I I I I I I I III I I I 1 I 1 II I I I I I l|l 1 I I I I I I 1 I 1 I I I I I I I -Vds(V) I 1 I I I 1 I I I I I I I I I 1 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I II 1 I I I I I I I I I I I Û 8 4 a, v a Figure 2. Id-Vds characteristics (PMOS) obtained from experiment, new model and SPICE MOS3 model. Some other effects like velocity saturation, surface mobility degrading due to changes in Vgs and Vbs and body effect in the linear region current have been included in the model“equations so as to increase the precision of the model. While doing this, the aim has been to minimize the number of model parameters and reduce the complexity of the equations used as far as possible. The model parameters have been aimed to be of physical significance and the aim has dominantly been reached. When the model was complete, it has been used to predict the Id-Vds and gds-Vos characteristics of an NMOS and a PMOS enhancement-mode transistors and the results seemed to show good agreement with the experimental results. When the same precedure had been applied to SPICE using the M0S3 model for simulating the two transistors, an average agreement with the experimental results was witnessed for the Id-Vds characteristics; but disappointing disharmony was observed between the gdB-VDs behaviours obtained from SPICE M0S3 model and experiment. So, SPICE M0S3 model Vllwas proven to be inadequate for analog circuit analysis where the conductance variations with the terminal voltages are of great importance (See Figures 1-4). C£ 12-3 O 10- 6- 4- 2- f\MM EXPERIMENT NEW MODEL (U 0- I I I I I I I I I I I I I I I I I I I I I I I I I I I I I < I I I I I I I I' I | I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I ”"T r Vds(V) Figure 3. gds-VDS characteristics (NMOS) obtained from experiment, new model and SPICE M0S3 model. AAAAA EXPERIMENT NEW MODEL - - SPICE (LEVEL-3) I | I I I I I I I I I I I I I I I 1 I I I I I I T I I I I 1 I I I I I I I I I I I I I I I I I I I I I I I I I I I I 1 I I I -Vds(V) v Figure 4. gde-VDS characteristics (PMOS) obtained from experiment, new model and SPICE M0S3 model. vıııDistortion analysis utilizing the new model has been carried out for a CMOS amplifier circuit and the results obtained have shown great resemblance to those obtained from measurements[13J. SPICE simulation with M0S3 model however, -as could be guessed- gave distortion analysis results which -unfortunately- held insignificant figures and had no similarities to the measurement results, as had already been mentioned elsewhereCi33(See Figure 5). o û X 1- 0.1 0.01 - aaaaa T.H.D.(Naw Model) 2. harmonic (New Mode!) - - 3. harmonic (New Model) nonaa T.H.D.(Spice M0S3) 2. harmonic (Spice MOS3) 3. harmonic (Sploe M0S3) - (IK= 9 ÜÂT II I II I 1 HI I I 1 II I I II I 111 1 1 I I 1 1 in 1 1 I I 1111 Hill I I III III II II III III II II Ml II III II III I I J II I i in n 1 1 I I I I I 1. 1 I II I I I I 1 I I 7 r VodcCV) 10 Figure 5. Comparison of harmonic distortion components obtained from distortion analysis utilizing the new model and SPICE M0S3 model. Consequently, it has been emphasized that, the new model introduced possessed the capability to represent the non-linear behaviour of the MOS transistor appropriately, with no excess complexities. Then, it has been mentioned that, this capability gave the right to the new model to be employed in analog IC analysis. It has been claimed that, with its little number of parameters and limited complexity, the new model was well an alternative model for the SPICE MOS models for computer simulation of analog integrated circuits. ix

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